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HFP50N06
July 2005
BVDSS = 60 V
HFP50N06
60V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.018 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) = 18 m ID = 50 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage
TC=25 unless otherwise specified
Parameter
Value 60
Units V A A A V mJ A mJ V/ns W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
50 35.4 200 25
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25) - Derate above 25
(Note 2) (Note 1) (Note 1) (Note 3)
490 50 12 7.0 120 0.8 -55 to +175 300
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RCS RJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 1.24 -62.5 /W Units
SEMIHOW REV.A0,July 2005
HFP50N06
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 25 A 2.0 --0.018 4.0 0.022 V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150 VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 ------0.06 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature /TJ Coefficient IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1600 600 90 2100 780 120
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 30 V, ID = 25 A, RG = 25
--------
15 105 60 65 40 10 17
40 220 130 140 52 ---
nC nC nC
VDS = 48 V, ID = 50 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------52 75 50 200 1.5 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230H, IAS=50A, VDD=25V, RG=25, Starting TJ =25C 3. ISD50A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,July 2005
HFP50N06
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
ID, Drain Current [A]
IDR, Reverse Drain Current [A]
RDS(ON)[], Drain-Source On-Resistance
VSD, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
3000
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
Capacitances [pF]
2000
Ciss Coss
VGS, Gate-Source Voltage [V]
2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 30V
10
VDS = 48V
8
1500
Note ; 1. VGS = 0 V 2. f = 1 MHz
6
1000
4
Crss
500
2
Note : ID = 50 A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,July 2005
HFP50N06
Typical Characteristics
(continued)
1.2
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
* Note : 1. VGS = 0 V 2. ID = 250 A
0.5
Note : 1. VGS = 10 V 2. ID = 25 A
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
103
Operation in This Area is Limited by R DS(on)
Figure 8. On-Resistance Variation vs Temperature
60
50
ID, Drain Current [A]
ID, Drain Current [A]
102
100 s 1 ms 10 ms 100 ms DC
* Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse
40
30
101
20
10
100 10-1
100
101
102
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oc]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
100
Z JC(t), Thermal Response
D=0.5 0.2 0.1
10-1
* Notes : 1. ZJC(t) = 1.24 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
0.05 0.02 0.01
PDM
single pulse
t1
10-2 10-1
10-2 10-5
t2
100 101
10-4
10-3
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,July 2005
HFP50N06
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,July 2005
HFP50N06
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,July 2005
HFP50N06
Package Dimension
TO-220 (A)
9.900.20
3
0 .6
0.
20
4.500.20 1.300.20
15.700.20
2.800.20
9.190.20
6.500.20
13.080.20
0.800.20 2.54typ 2.54typ 0.500.20
3.020.20
1.270.20 1.520.20
2.400.20
SEMIHOW REV.A0,July 2005
HFP50N06
TO-220 (B)
0.20
. 3
84
0
0 .2
4.570.20 1.270.20
15.440.20
2.740.20
9.140.20
6.300.20
2.670.20
13.280.20
1.270.20
2.670.20
0.810.20 2.54typ 2.54typ 0.400.20
SEMIHOW REV.A0,July 2005

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